SI4884 Datasheet, PDF (2/12 Pages) NXP Semiconductors – TrenchMOS™ logic level FET

Philips Semiconductors
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
drain-source voltage (DC)
V_GS
gate-source voltage
I_D
drain current
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
T_j = 25 to 150 °C
T_sp = 25 °C; Figure 2 and 3
T_sp = 25 °C; pulsed; Figure 3
T_sp = 25 °C; Figure 1
I_S
source (diode forward) current
T_sp = 25 °C
SI4884
TrenchMOS™ logic level FET
Min
Max Unit
-
30
V
-
±20
V
-
12
A
-
45
A
-
2.5
W
−55
+150 °C
−55
+150 °C
-
12
A
9397 750 09582
Product data
Rev. 02 — 12 April 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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