SI4420DY Datasheet, PDF (7/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
Si4420DY
N-channel enhancement mode field-effect transistor
50
VDS > ID x RDSon
gfs
(S)
40
03ae59
Tj = 25 ºC
30
150 ºC
20
10
0
0
10
20
30
40 ID (A) 50
T_j = 25 °C and 150 °C; V_DS > I_D x R_DSon
Fig 11. Forward transconductance as a function of
drain current; typical values.
50
VGS = 0 V
IS
(A)
40
03ae60
104
Ciss,
Coss,
Crss
(pF)
103
03ae61
Ciss
Coss
C rss
102
10-1
1
10 VDS (V) 102
V_GS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
10
VGS ^{ID = 12.5A}
(V) ^{VDD = 15 V}
8 ^Tj ^{= 25 ºC}
03ae62
30
6
20
4
150 ºC
10
2
Tj = 25 ºC
0
0
0.3
0.6
0.9 V_SD (V) 1.2
T_j = 25 °C and 150 °C; V_GS = 0 V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage;
typical values.
0
0
15
30
45
60Q_G (nC)75
I_D = 12.5 A; V_DD =15 V
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
9397 750 08239
Product data
Rev. 01 — 28 May 2001
© Philips Electronics N.V. 2001. All rights reserved.
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