SI4420DY Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
Si4420DY
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
T_j = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V_GS(th)
I_DSS
gate-source threshold voltage
drain-source leakage current
I_GSS
I_D(on)
R_DSon
gate-source leakage current
on-state drain current
drain-source on-state resistance
Dynamic characteristics
I_D = 250 µA; V_DS = V_GS; Figure 9
V_DS = 30 V; V_GS = 0 V
T_j = 25 °C
T_j = 55 °C
V_GS = ±20 V; V_DS = 0 V
V_DS ≥ 5 V; V_GS = 10 V
V_GS = 10 V; I_D = 12.5 A; Figure 7 and 8
V_GS = 4.5 V; I_D = 10.5 A; Figure 7 and 8
g_fs
forward transconductance
Q_g(tot) total gate charge
Q_gs
gate-source charge
Q_gd
gate-drain (Miller) charge
t_d(on)
turn-on delay time
t_r
turn-on rise time
t_d(off)
turn-off delay time
t_f
turn-off fall time
Source-drain (reverse) diode
V_DS = 15 V; I_D = 7 A; Figure 11
I_D = 12.5 A; V_DD = 15 V; V_GS = 10 V; Figure 14
V_DD = 15 V; R_D = 15 Ω; V_GS = 10 V; R_G = 6 Ω
V_SD
source-drain (diode forward) voltage I_S = 2.3 A; V_GS = 0 V; Figure 13
t_rr
reverse recovery time
I_S = 2.3 A; dI_S/dt = −100 A/µs
Min Typ Max Unit
1−−V
− − 1 µA
− − 5 µA
− − 100 nA
30
−A
− 7.3 9 mΩ
− 10.9 13 mΩ
− 15 − S
− 64.5 120 nC
− 7.6 − nC
− 11.5 − nC
− 12 30 ns
− 15 60 ns
− 60 150 ns
− 50 140 ns
− 0.7 1.1 V
− 60 − ns
50
10 V 4 V
ID
(A)
40
03ae56
50
VDS > ID x RDSon
ID
(A)
40
03ae58
30
30
20
20
150 ºC
VGS = 3 V
10
10
25 ºC
0
0
0.5
1
1.5 VDS (V) 2
0
0
1
2
3 VGS (V) 4
Fig 5. Output characteristic; drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 150 °C; V_DS > I_D x R_DSon
Fig 6. Transfer characteristic: drain current as
function of gate-source voltage; typical values
9397 750 08239
Product data
Rev. 01 — 28 May 2001
© Philips Electronics N.V. 2001. All rights reserved.
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