SI4420DY Datasheet, PDF (3/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
Si4420DY
N-channel enhancement mode field-effect transistor
120
03aa11
Pder ¹⁰⁰
(%)
80
60
40
20
0
0 25 50 75 100 125 150 175
Tamb (oC)
P_der
=
-------^P----^t--^o--^t-------
P
×
100
%
t o t ( 25 ^°C )
Fig 1. Normalized total power dissipation as a
function of ambient temperature.
120
Ider ₁₀₀
(%)
80
03aa19
60
40
20
0
0 25 50 75 100 125 150 175
Tamb (oC)
V_GS ≥ 10 V
I_D = -_I------^I---^D-------- × 100%
D ( 25 ^°C )
Fig 2. Normalized continuous drain current as a
function of ambient temperature.
102
ID
(A)
10
RDSon = VDS/ ID
1
P
10-1
10-2
10-1
δ
=
tp
T
tp
t
T
D.C.
1
03ae55
tp = 10 µs
100 µs
1 ms
10 ms
100 ms
10
VDS (V)
102
T_amb = 25 °C; I_DM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08239
Product data
Rev. 01 — 28 May 2001
© Philips Electronics N.V. 2001. All rights reserved.
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