SI4420DY Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
Si4420DY
N-channel enhancement mode field-effect transistor
0.02
RDSon
(Ω)
0.01
03ae57
4V
VGS =10 V
03ad57
2
a
1.6
1.2
0.8
0.4
Tj = 25 ºC
0
0
10
20
30
40 _{ID (A)} 50
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120 _{Tj (ºC)} 180
a = -------^R----^D----^S--^o---ⁿ-------
R
D S o n ( 25 ^°C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
2.5
V_GS(th)
(V)
2
1.5
1
03aa33
10-1
I_D
03aa36
(A)
10-2
10-3
min typ max
10-4
0.5
10-5
0
-60
0
60
120
180
T_j (^oC)
I_D = 250 µA; V_DS = V_GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
10-6
0
0.5
1
1.5
2
2.5
3
V_GS (V)
T_j = 25 °C; V_DS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
9397 750 08239
Product data
Rev. 01 — 28 May 2001
© Philips Electronics N.V. 2001. All rights reserved.
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