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SI4420DY Datasheet, PDF (2/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor | |||
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Philips Semiconductors
Si4420DY
N-channel enhancement mode ï¬eld-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
Tj = 25 to 150 °C
Tamb = 25 °C; pulsed; tp ⤠10 s
Tamb = 25 °C; pulsed; tp ⤠10 s
VGS = 10 V; ID = 12.5 A
VGS = 4.5 V; ID = 10.5 A
Typ
Max Unit
â
30
V
â
12.5 A
â
2.5
W
â
150
°C
7.3
9
mâ¦
10.9 13
mâ¦
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VDS
drain-source voltage (DC)
VGS
gate-source voltage (DC)
ID
drain current (DC)
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
operating junction temperature
Source-drain diode
Tj = 25 to 150 °C
â
â
Tamb = 25 °C; pulsed; tp ⤠10 s; Figure 2 and 3 â
Tamb = 70 °C; pulsed; tp ⤠10 s; Figure 2
â
Tamb = 25 °C; pulsed; tp ⤠10 µs; Figure 3
â
Tamb = 25 °C; pulsed; tp ⤠10 s;
â
Tamb = 70 °C; pulsed; tp ⤠10 s; Figure 1
â
â55
â55
IS
source (diode forward) current (DC) Tamb = 25 °C; pulsed; tp ⤠10 s
â
Max Unit
30
V
±20
V
12.5 A
10
A
50
A
2.5
W
1.6
W
+150 °C
+150 °C
2.3
A
9397 750 08239
Product data
Rev. 01 â 28 May 2001
© Philips Electronics N.V. 2001. All rights reserved.
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