PSMN3R0-30YLD_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology

NXP Semiconductors
PSMN3R0-30YLD
N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
Symbol
Parameter
Conditions
Q_oss
output charge
V_GS = 0 V; V_DS = 15 V; f = 1 MHz;
T_j = 25 °C
Source-drain diode
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C; Fig. 15
t_rr
reverse recovery time I_S = 25 A; dI_S/dt = -100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 15 V; Fig. 16
[1]
t_a
reverse recovery rise
time
t_b
reverse recovery fall
time
S
softness factor
[1] includes capacitive recovery
120
I_D
(A)
90
aaa-008336
20
R_DSon
(mΩ)
16
Min Typ Max Unit
-
21.8 -
nC
-
0.82 1.2 V
-
29.2 58.3 ns
-
19
38.1 nC
-
14.1 -
ns
-
15.1 -
ns
-
1.07 -
aaa-008335
12
60
8
30
150°C
T_j = 25°C
4
0
0
0.8
1.6
2.4
3.2
4
V_GS (V)
0
0 2 4 6 8 10 12 14 16
V_GS (V)
Fig. 7. Transfer characteristics; drain current as a
Fig. 8. Drain-source on-state resistance as a function
function of gate-source voltage; typical values
of gate-source voltage; typical values
PSMN3R0-30YLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
18 February 2014
© NXP N.V. 2014. All rights reserved
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