 English |
|
|
|
|
|
|
|
| PSMN3R0-30YLD_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | |||
| |||
| ◁ |
NXP Semiconductors
7. Marking
Table 4. Marking codes
Type number
PSMN3R0-30YLD
PSMN3R0-30YLD
N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
Marking code
3D030L
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
drain-source voltage
25 °C ⤠Tj ⤠175 °C
VDGR
drain-gate voltage
25 °C ⤠Tj ⤠175 °C; RGS = 20 kΩ
VGS
gate-source voltage
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 2
[1]
VGS = 10 V; Tmb = 100 °C; Fig. 2
IDM
peak drain current
pulsed; tp ⤠10 µs; Tmb = 25 °C; Fig. 3
Tstg
storage temperature
Tj
junction temperature
Tsld(M)
peak soldering temperature
VESD
electrostatic discharge voltage HBM
Source-drain diode
IS
source current
Tmb = 25 °C
ISM
peak source current
pulsed; tp ⤠10 µs; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 25 A; [2]
Vsup ⤠30 V; RGS = 50 Ω; unclamped;
tp = 467 µs
[1] Continuous current is limited by package.
[2] Protected by 100% test
Min Max Unit
-
30
V
-
30
V
-20 20
V
-
91
W
-
100 A
-
90
A
-
512 A
-55 175 °C
-55 175 °C
-
260 °C
500 -
V
-
76
A
-
512 A
-
227.5 mJ
PSMN3R0-30YLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
18 February 2014
© NXP N.V. 2014. All rights reserved
3 / 13
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese