PSMN3R0-30YLD_15 Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology

NXP Semiconductors
120
P_der
(%)
80
PSMN3R0-30YLD
N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
03aa16
150
I_D
(A)
125
(1)
100
aaa-008332
75
40
50
25
0
0
50
100
150
200
T_mb (°C)
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
0
0 25 50 75 100 125 150 175 200
T_mb (°C)
(1) Capped at 100A due to package
Fig. 2. Continuous drain current as a function of
mounting base temperature
10³
I_D
(A)
10²
Limit R_DSon = V_DS / I_D
10
1
aaa-008333
t_p = 10 us
100 us
DC
1 ms
10 ms
100 ms
10^-1
10^-1
1
10
10²
V_DS (V)
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
R_th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
Fig. 4
PSMN3R0-30YLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
18 February 2014
Min Typ Max Unit
-
1.46 1.64 K/W
© NXP N.V. 2014. All rights reserved
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