PSMN004-36B Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PSMN004-36P/36B
N-channel enhancement mode field-effect transistor
2.5
V_GS(th)
(V)
2
1.5
1
max
typ
min
03aa33
10-1
I_D
(A)
10-2
10-3
10-4
03aa36
min typ max
0.5
10-5
0
-60
0
60
120
180
T_j (^oC)
I_D = 1 mA; V_DS = V_GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
10-6
0
0.5
1
1.5
2
2.5
3
V_GS (V)
T_j = 25 °C; V_DS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
105
C
(pF)
03ag49
104
C_iss
103
10-1
1
C_oss
C_rss
10
102
V_DS (V)
V_GS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 08621
Product data
Rev. 01 — 19 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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