PSMN004-36B Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PSMN004-36P/36B
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
R_th(j-mb) thermal resistance from junction to mounting
base
R_th(j-a) thermal resistance from junction to ambient
Conditions
Figure 4
vertical in still air; SOT78 package
mounted on a printed circuit board;
minimum footprint; SOT404 package
7.1 Transient thermal impedance
Value Unit
0.65 K/W
60 K/W
50 K/W
1
Z_{th j-mb}
(K/W)
δ = 0.5
0.2
10-1
0.1
0.05
0.02
10-2
single pulse
10-3
10-6
10-5
10-4
10-3
03ag43
10-2
P
δ
=
tp
T
tp
t
T
10-1
t_p (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 08621
Product data
Rev. 01 — 19 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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