PSMN004-36B Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PSMN004-36P/36B
N-channel enhancement mode field-effect transistor
120
P_der
(%)
80
03aa16
120
I_D
(%)
80
03ag42
40
40
0
0
50
100
150
200
T_mb (^oC)
P_der = _P-------^P----^t--^o---^t------- × 100%
t o t ( 25 ^°C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
103
I_D
(A)
102
R_DS(on) = V_DS/ I_D
10
0
0
50
100
150
200
Tmb (ºC)
I_der = -_I-------^I--^D--------- × 100%
D ( 25 ^°C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03ag44
t_p = 10 us
100 us
1 ms
DC
10 ms
100 ms
1
1
10
102
V_DS (V)
T_mb = 25 °C; I_DM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08621
Product data
Rev. 01 — 19 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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