PSMN004-36B Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PSMN004-36P/36B
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V_(BR)DSS drain-source breakdown voltage
V_GS(th) gate-source threshold voltage
I_DSS
drain-source leakage current
I_GSS
R_DSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
I_D = 0.25 mA; V_GS = 0 V
T_j = 25 °C
T_j = −55 °C
I_D = 1 mA; V_DS = V_GS; Figure 9
T_j = 25 °C
T_j = 175 °C
T_j = −55 °C
V_DS = 30 V; V_GS = 0 V
T_j = 25 °C
T_j = 175 °C
V_GS = ±10 V; V_DS = 0 V
V_GS = 5 V; I_D = 25 A; Figure 7 and 8
T_j = 25 °C
T_j = 175 °C
V_GS = 4.5 V; I_D = 25 A; Figure 7 and 8
T_j = 25 °C
V_GS = 10 V; I_D = 25 A; Figure 7 and 8
T_j = 25 °C
Q_g(tot) total gate charge
Q_gs
gate-source charge
Q_gd
gate-drain (Miller) charge
C_iss
input capacitance
C_oss
output capacitance
C_rss
reverse transfer capacitance
t_d(on)
turn-on delay time
t_r
turn-on rise time
t_d(off)
turn-off delay time
t_f
turn-off fall time
Source-drain diode
I_D = 75 A; V_DD = 15 V; V_GS = 5 V; Figure 13
V_GS = 0 V; V_DS = 20 V; f = 1 MHz; Figure 11
V_DD = 15 V; R_D = 1.2 Ω; V_GS = 5 V; R_G = 6 Ω;
resistive load
V_SD
source-drain (diode forward) voltage I_S = 25 A; V_GS = 0 V; Figure 12
V_SD
source-drain (diode forward) voltage I_S = 75 A; V_GS = 0 V; Figure 12
t_rr
reverse recovery time
I_S = 20 A; dI_S/dt = −100 A/µs; V_GS = 0 V
Q_r
recovered charge
Min Typ Max Unit
36 − − V
32 − − V
1 1.5 2 V
0.5 − − V
− − 2.3 V
− 0.05 10 µA
− − 500 µA
− 1 100 nA
− 4 5 mΩ
− − 9.25 mΩ
− − 5.4 mΩ
− 3.5 4 mΩ
− 97 − nC
− 20 − nC
− 39 − nC
− 6000 − pF
− 1700 − pF
− 1400 − pF
− 45 − ns
− 220 − ns
− 435 − ns
− 320 − ns
− 0.85 1.2 V
− 1.1 − V
− 400 − ns
− 1 − µC
9397 750 08621
Product data
Rev. 01 — 19 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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