PSMN004-36B Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PSMN004-36P/36B
N-channel enhancement mode field-effect transistor
80
I_D
(A)
60
40
10 V 5 V
2.8 V
03ag45
2.6 V
T_j = 25 ºC
2.4 V
80
I_D ^VDS ^{> I}D ^{x R}DS(ON)
(A)
60
40
03ag47
20
0
0
2.2 V
V_GS = 2 V
0.2
0.4
0.6
0.8
1
V_DS (V)
20
0
-0.2
175 ºC
T_j = 25 ºC
0.6
1.4
2.2
3
V_GS (V)
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 175 °C; V_DS > I_D x R_DSON
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
0.01
03ag46
2
R_{DS(on) Tj = 25 ºC}
V_GS = 2.6V
a
(Ω)
0.008
1.6
2.8 V
0.006
1.2
03aa27
0.004
0.002
5V
0.8
10 V
0.4
0
0
20
40
60
80
I_D (A)
0
-60
0
60
120 _{Tj (oC)} 180
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = --------^R---^D----^S---^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 08621
Product data
Rev. 01 — 19 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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