PSMN003-30P Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PSMN003-30 series
N-channel enhancement mode field-effect transistor
4
V_GS(th)
(V)
3
2
max
typ
03af65
1
I_D
(A) _10-1
10-2
10-3
03af66
min
typ
max
min
1
10-4
10-5
0
-60
-20
20
60 100 140 180
T_j (ºC)
10-6
0
1
2
3
4
V_GS (V)
I_D = 1 mA; V_DS = V_GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
T_j = 25 °C; V_DS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
105
C
(pF)
104
103
03af55
C_iss
C_oss
C_rss
102
10-1
1
10 V_DS (V) 102
V_GS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 08316
Product data
Rev. 01 — 23 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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