PSMN003-30P Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PSMN003-30 series
N-channel enhancement mode field-effect transistor
400
I_D
(A) ₃₅₀
V_GS = 10 V 7 V 5.2 V
5V
15 V
300 20 V
250
200
150
100
50
0
0
0.5
1
1.5
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T_j = 25 ºC
4.8 V
4.6 V
4.4 V
4.2 V
4V
3.8 V
3.6 V
3.4 V
2
2.5
V_DS (V)
100
I_D
(A)
V_DS > I_D x R_DSon
80
175 ºC
60
40
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T_j = 25 ºC
20
0
0
1
2
3
4
5
6
V_GS (V)
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 175 °C; V_DS > I_D x R_DSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
0.006
R_DSon
(Ω)
0.005
3.8 V 4 V 4.2 V 4.4 V 4.6 V 4.8 V
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0.004
0.003
0.002
0.001
0
0
5V
5.2 V
6V
10 V
15 V
V_GS = 20 V
T_j = 25 ºC
100
200
300
400
500
I_D (A)
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
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2
a
1.6
1.2
0.8
0.4
0
-60
0
60
120
180
T_j (ºC)
a = --------^R---^D----^S---^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 08316
Product data
Rev. 01 — 23 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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