PSMN003-30P Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PSMN003-30 series
N-channel enhancement mode field-effect transistor
120
P_der
(%)
80
03aa16
40
0
0
50
100
150
200
T_mb (^oC)
P_der = _P-------^P----^t--^o---^t------- × 100%
t o t ( 25 ^°C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
120
I_der
(%)
100
03af36
80
60
40
20
0
0
30
60
90 120 150 180
T_mb (ºC)
I_der = -_I-------^I--^D--------- × 100%
D ( 25 ^°C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
103
I_D
(A)
R_DSon = V_DS/ I_D
102
P
δ
=
tp
T
DC
10
tp
t
T
t_p = 10 µs
100 µs
1 ms
10 ms
100 ms
03af49
1
1
10
V_DS (V)
102
T_mb = 25 °C; I_DM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08316
Product data
Rev. 01 — 23 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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