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| PSMN003-30P Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor | |||
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PSMN003-30P; PSMN003-30B
N-channel enhancement mode ï¬eld-effect transistor
Rev. 01 â 23 October 2001
Product data
1. Description
N-channel logic level ï¬eld-effect power transistor in a plastic package using
TrenchMOSâ¢1 technology.
Product availability:
PSMN003-30P in SOT78 (TO-220AB)
PSMN003-30B in SOT404 (D2-PAK)
2. Features
s Low on-state resistance
s Fast switching.
3. Applications
s High frequency computer motherboard DC to DC converters
s OR-ing applications.
4. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT78 and SOT404, simpliï¬ed outline and symbol
Description
Simpliï¬ed outline
gate (g)
drain (d)
[1]
mb
mb
source (s)
drain (d)
Symbol
d
g
MBB076
s
MBK106
123
SOT78 (TO-220AB)
2
1
3 MBK116
SOT404 (D2-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
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