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PSMN003-30P Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor
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Philips Semiconductors
PSMN003-30 series
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 30 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 25 A; Figure 7 and 8
Tj = 25 °C
Tj = 175 °C
VGS = 5 V; ID = 25 A; Figure 7 and 8
Tj = 25 °C
Qg(tot) total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
turn-on rise time
td(off)
turn-off delay time
tf
turn-off fall time
Source-drain diode
ID = 75 A; VDD = 15 V; VGS = 10 V;
Figure 13
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Figure 11
VDD = 15 V; ID = 12 A; VGS = 10 V;
RG = 6 Ω; resistive load
VSD
source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12
Min Typ Max Unit
30 −
−
V
27 −
−
V
1
2
0.4 −
−
−
3
V
−
V
3.4 V
−
0.02 1
µA
−
−
500 µA
−
10 100 nA
−
2.4 2.8 mΩ
−
4.32 5
mΩ
−
3.3 4
mΩ
−
170 −
nC
−
44 −
nC
−
45 −
nC
−
9200 −
pF
−
1930 −
pF
−
1300 −
pF
−
33 −
ns
−
66 −
ns
−
210 −
ns
−
115 −
ns
−
0.85 1.2 V
9397 750 08316
Product data
Rev. 01 — 23 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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