PHP225 Datasheet, PDF (7/12 Pages) NXP Semiconductors – Dual P-channel enhancement mode MOS transistor

Philips Semiconductors
Dual P-channel enhancement
mode MOS transistor
6
handbook, halfpage
IS
(A)
4
2
MBE156
(1) (2)
(3)
Product specification
PHP225
10⁴
handbook, halfpage
RDSon
(mΩ)
(1)(2)(3)(4) (5)
10³
MDA165
0
0
0.5
1
1.5
2
V _SD (V)
V_GD = 0.
(1) T_j = 150 °C.
(2) T_j = 25 °C.
(3) T_j = −55 °C.
Fig.8 Source current as a function of source-drain
diode forward voltage.
10²
0
−2
−4
−V_DS ≥ −I_D × R_DSon; T_j = 25 °C.
(1) I_D = −0.1 A.
(2) I_D = −0.5 A.
(3) I_D = −1 A.
−6
−8
−10
VGS (V)
(4) I_D = −2.3 A.
(5) I_D = −4.5 A.
Fig.9 Drain-source on-state resistance as a
function of gate-source voltage; typical
values.
1.2
handbook, halfpage
k
1.1
MBE138
1.0
0.9
0.8
0.7
0.6
50
0
50
100
Tj
( ^oC) ¹⁵⁰
k = -V----_G^V----_SG---_t-^Sh---^t--^h_{a---t--a--2-t--5--T--°}--^j-C---
Typical V_GSth at I_D = 1 mA; V_DS =V_GS = V_GSth.
Fig.10 Temperature coefficient of gate-source
threshold voltage.
1997 Jun 20
1.8
handbook, halfpage
k
1.6
1.4
MBE146
(1)
(2)
1.2
1.0
0.8
0.6
50
0
50
k = _R-----D-R---_S-^D--_o--^S-_n--^o--a-ⁿ---t--a-2--t-5---T---_°-^j--C---
Typical R_DSon at:
(1) I_D = −1 A; V_GS = −10 V.
(2) I_D = −0.5 A; V_GS = −4.5 V.
100
Tj
( ^oC) ¹⁵⁰
Fig.11 Temperature coefficient of drain-source
on-resistance.
7