PHP225 Datasheet, PDF (6/12 Pages) NXP Semiconductors – Dual P-channel enhancement mode MOS transistor

Philips Semiconductors
Dual P-channel enhancement
mode MOS transistor
handboo⁶k,⁰h⁰alfpage
C
(pF)
400
200
0
0
10
MBE144
C _iss
Coss
Crss
20 _{V DS (V)} 30
V_GS = 0.
T_j = 25 °C.
Fig.4 Capacitance as a function of drain-source
voltage; typical values.
Product specification
PHP225
,
g
10
ID
(A)
8
VGS =
10 V
7.5 V
MBE154
6V
6
5V
4.5 V
4
4V
2
3.5 V
3V
2.5 V
0
0
2
4
6
8
10
12
VDS (V)
T_j = 25 °C.
Fig.5 Output characteristics; typical values.
10
handbook, halfpage
ID
(A)
8
6
MBE157
4
2
0
0
2
4
6
8
V _GS (V)
handbook,¹h⁰alfpage
VGS
(V)
8
MBE145
6
4
2
0
0
2
4
6
8
10
Q _g (nC)
V_DS = −10 V.
T_j = 25 °C.
Fig.6 Transfer characteristic; typical values.
1997 Jun 20
V_DD = −15 V.
I_D = −2.3 A.
Fig.7 Gate-source voltage as a function of total
gate charge.
6