PHP225 Datasheet, PDF (2/12 Pages) NXP Semiconductors – Dual P-channel enhancement mode MOS transistor

Philips Semiconductors
Dual P-channel enhancement
mode MOS transistor
Product specification
PHP225
FEATURES
• High-speed switching
• No secondary breakdown
• Very low on-resistance.
APPLICATIONS
• Motor and actuator driver
• Power management
• Synchronized rectification.
DESCRIPTION
Two P-channel enhancement mode MOS transistors in an
8-pin plastic SOT96-1 (SO8) package.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PINNING - SOT96-1 (SO8)
PIN
SYMBOL
1
s₁
2
g₁
3
s₂
4
g₂
5
d₂
6
d₂
7
d₁
8
d₁
handbook, halfpage
8
5
1
4
MAM119
DESCRIPTION
source 1
gate 1
source 2
gate 2
drain 2
drain 2
drain 1
drain 1
d1 d1
d2 d2
s1 g1 s2 g2
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
Per P-channel
V_DS
V_SD
V_GSO
V_GSth
I_D
R_DSon
P_tot
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
CONDITIONS
MIN.
MAX.
UNIT
−
I_S = −1.25 A
−
open drain
−
I_D = −1 mA; V_DS = V_GS −1
−
I_D = −1 A; V_GS = −10 V −
T_s = 80 °C
−
−30
V
−1.6
V
±20
V
−2.8
V
−2.3
A
0.25
Ω
2
W
1997 Jun 20
2