PHP225 Datasheet, PDF (5/12 Pages) NXP Semiconductors – Dual P-channel enhancement mode MOS transistor

Philips Semiconductors
Dual P-channel enhancement
mode MOS transistor
Product specification
PHP225
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-s}
thermal resistance from junction to soldering point
VALUE
35
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per P-channel
V_(BR)DSS
V_GSth
I_DSS
I_GSS
I_Don
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
on-state drain current
R_DSon
drain-source on-state resistance
y_fs
C_iss
C_oss
C_rss
Q_G
Q_GS
Q_GD
forward transfer admittance
input capacitance
output capacitance
reverse transfer capacitance
total gate charge
gate-source charge
gate-drain charge
Switching times
t_on
turn-on time
t_off
turn-off time
Source-drain diode
V_DS
source drain diode forward
voltage
t_rr
reverse recovery time
CONDITIONS
V_GS = 0; I_D = −10 µA
V_GS = V_DS; I_D = −1 mA
V_GS = 0; V_DS = −24 V
V_GS = ±20 V; V_DS = 0
V_GS = −10 V; V_DS = −1 V
V_GS = −4.5 V; V_DS = −5 V
V_GS = −4.5 V; I_D = −0.5 A
V_GS = −10 V; I_D = −1 A
V_DS = −20 V; I_D = −1 A
V_GS = 0; V_DS = −20 V; f = 1 MHz
V_GS = 0; V_DS = −20 V; f = 1 MHz
V_GS = 0; V_DS = −20 V; f = 1 MHz
V_GS = −10 V; V_DS = −15 V;
I_D = −2.3 A
V_GS = −10 V; V_DS = −15 V;
I_D = −2.3 A
V_GS = −10 V; V_DS = −15 V;
I_D = −2.3 A
V_GD = 0 to −10 V; V_DD = −20 V;
I_D = −1 A; R_L = 20 Ω
V_GS = −10 to 0 V; V_DD = −20 V;
I_D = −1 A; R_L = 20 Ω
V_GD = 0; I_S = −1.25 A
I_S = −1.25 A; di/dt = 100 A/µs
MIN. TYP. MAX. UNIT
−30 −
−
V
−1
−
−2.8 V
−
−
−100 nA
−
−
±100 nA
−2.3 −
−
A
−1
−
−
A
−
0.33 0.4
Ω
−
0.22 0.25 Ω
1
2
−
S
−
250 −
pF
−
140 −
pF
−
50
−
pF
−
10
25
nC
−
1
−
nC
−
3
−
nC
−
20
80
ns
−
50
140 ns
−
−
−1.6 V
−
150 200 ns
1997 Jun 20
5