PHP108NQ03LT Datasheet, PDF (7/14 Pages) NXP Semiconductors – TrenchMOS logic level FET

Philips Semiconductors
PHP/PHB/PHD108NQ03LT
TrenchMOS™ logic level FET
2.5
VGS(th)
(V)
2
1.5
1
max
typ
min
03aa33
10-1
ID
(A)
10-2
10-3
10-4
03aa36
min typ
max
0.5
10-5
0
-60
0
60
120
180
Tj (°C)
10-6
0
1
2
3
VGS (V)
I_D = 1 mA; V_DS = V_GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
T_j = 25 °C; V_DS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
104
C
(pF)
103
003aaa195
Ciss
20
IS
(A)
15
10
003aaa196
Coss
Crss
5
175 °C
Tj = 25 °C
102
10-1
1
10 _{VDS (V)} 102
0
0.2
0.4
0.6
0.8 _{VSD (V)} 1
V_GS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
T_j = 25 °C and 175 °C; V_GS = 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
9397 750 10159
Product data
Rev. 02 — 11 September 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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