PHP108NQ03LT Datasheet, PDF (3/14 Pages) NXP Semiconductors – TrenchMOS logic level FET

Philips Semiconductors
PHP/PHB/PHD108NQ03LT
TrenchMOS™ logic level FET
120
Pder
(%)
80
03aa16
40
0
0
50
100
150
200
Tmb (°C)
P_der = _P-------^P----^t--^o---^t------- × 100%
t o t ( 25 ^°C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
103
ID
(A)
Limit RDSon = VDS / ID
102
DC
10
120
Ider
(%)
80
03aa24
40
0
0
50
100
150
200
Tmb (°C)
V_GS ≥ 5 V
I_der = -_I-------^I--^D--------- × 100%
D ( 25 ^°C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
003aaa190
tp = 10 µs
100 µs
1 ms
10 ms
1
1
10
102
VDS (V)
T_mb = 25 °C; I_DM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 10159
Product data
Rev. 02 — 11 September 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
3 of 14