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PHP108NQ03LT Datasheet, PDF (5/14 Pages) NXP Semiconductors – TrenchMOS logic level FET
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Philips Semiconductors
PHP/PHB/PHD108NQ03LT
TrenchMOS™ logic level FET
5. Characteristics
Table 4: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
VGS(th) gate-source threshold voltage
ID = 1 mA; VDS = VGS; Figure 9
IDSS
drain-source leakage current
IGSS
gate-source leakage current
VDS = 25 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±10 V; VDS = 0 V
RDSon drain-source on-state resistance
VGS = 5 V; ID = 25 A; Figure 7 and 8
Tj = 25 °C
Tj = 175 °C
VGS = 10 V; ID = 25 A
Dynamic characteristics
Qg(tot) total gate charge
ID = 40 A; VDD = 15 V; VGS = 5 V; Figure 13
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 11
Coss
output capacitance
Crss
td(on)
tr
reverse transfer capacitance
turn-on delay time
rise time
VDD = 15 V; RD = 0.6 Ω; VGS = 5 V; RG = 10 Ω
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12
trr
reverse recovery time
Qr
recovered charge
IS = 20 A; dIS/dt = −100 A/µs; VGS = 0 V;
VDS = 25 V
Min Typ Max Unit
25 -
22 -
1-
-
V
-
V
2V
-
0.05 1 µA
-
-
500 µA
-
0.02 100 nA
-
6.2 7.5 mΩ
-
10 14 mΩ
-
5.1 6.0 mΩ
-
23 -
nC
-
8.4 -
nC
-
7.3 9.9 nC
-
1990 -
pF
-
580 -
pF
-
230 -
pF
-
24 -
ns
-
102 -
ns
-
53 -
ns
-
54 -
ns
-
0.9 1.2 V
-
34 -
ns
-
27 -
nC
9397 750 10159
Product data
Rev. 02 — 11 September 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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