PHP108NQ03LT Datasheet, PDF (6/14 Pages) NXP Semiconductors – TrenchMOS logic level FET

Philips Semiconductors
PHP/PHB/PHD108NQ03LT
TrenchMOS™ logic level FET
40
ID
(A)
30
20
10 V
5V
4V
3.5 V
003aaa192
3V
2.8 V
40
ID ^{VDS > ID x RDSon}
(A)
30
20
003aaa193
10
2.6 V
2.4 V
2.2 V
0
0
0.5
1
1.5
2
VDS (V)
10
0
1
Tj = 175 °C
25 °C
2
3
4
VGS (V)
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 175 °C; V_DS > I_D × R_DSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
003aaa194
0.1
RDSon
2.6 V
VGS = 2.8 V
2
(Ω)
a
0.08
1.5
0.06
1
0.04
03aa27
0.02
0
0
5
T_j = 25 °C
3V
3.5 V
5V
10 V
10
15
20
ID (A)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0.5
0
-60
0
60
120
180
Tj (°C)
a = --------^R----^D----^S--^o---ⁿ--------
R _{D S o n ( 25 ° C )}
Fig 8. Normalized drain source on-state resistance
factor as a function of junction temperature.
9397 750 10159
Product data
Rev. 02 — 11 September 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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