BUK763R4-30B_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK763R4-30B
N-channel TrenchMOS standard level FET
400
I_D
(A) ¹⁰
300 20
87
200
003aab187
label is V_GS (V)
6.5
6
20
R_DSon label is V_GS (V)
(mΩ)
16
6.5
5.5 6
5
12
003aab189
5.5
8
100
5
4.5
4
3.5
0
0
2
4
6
8 _{VDS (V)10}
8
4
10
20
0
0
100
200
300
400
I_D (A)
Fig 6.
T_j = 25 °C
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7.
T_j = 25 °C
Drain-source on-state resistance as a function
of drain current; typical values
80
g_fs
(S)
60
003aab190
120
I_D
(A)
100
80
003aab192
40
60
20
0
0
25
50
75
100
I_D (A)
T_j = 25 °C; V_DS = 25 V
Fig 8. Forward transconductance as a function of
drain current; typical values
40
T_j = 175 °C
20
T_j = 25 °C
0
0
2
4
6
V_GS (V)
Fig 9.
V_DS = 25 V
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
BUK763R4-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
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