BUK763R4-30B_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
250
I_D
(A)
200
150
100
50
0
0
003aab196
(1)
50
100
150
200
T_j (°C)
BUK763R4-30B
N-channel TrenchMOS standard level FET
120
P_der
(%)
80
03na19
40
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
10²
I_AL
(A)
10
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aab195
(1)
(2)
(3)
1
10^-3
10^-2
10^-1
1 _{tAL (ms)} 10
Fig 3. Single shot and repetitive avalanche rating; avalanche current as a function of avalanche time
BUK763R4-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
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