BUK763R4-30B_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK763R4-30B
N-channel TrenchMOS standard level FET
Rev. 2 — 21 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Suitable for standard level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V loads
„ Automotive systems
„ General purpose power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V_DS
I_D
Quick reference data
Parameter
drain-source voltage
drain current
P_tot
total power dissipation
Static characteristics
R_DSon
drain-source on-state
resistance
Avalanche ruggedness
E_DS(AL)S
non-repetitive
drain-source
avalanche energy
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
V_GS = 10 V; T_mb = 25 °C;
see Figure 1; see Figure 4
T_mb = 25 °C; see Figure 2
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C;
see Figure 12; see Figure 13
I_D = 75 A; V_sup ≤ 30 V;
R_GS = 50 Ω; V_GS = 10 V;
T_j(init) = 25 °C; unclamped
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 30 V
[1] _-
-
75 A
- - 255 W
- 2.9 3.4 mΩ
- - 1.3 J