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| BUK763R4-30B_15 Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
104
ID
(A)
103
102
10
1
10-1
limit R DSon = VDS/ ID
(1)
DC
1
BUK763R4-30B
N-channel TrenchMOS standard level FET
003aab185
tp = 10 μ s
100 μs
1 ms
10 ms
100 ms
10
VDS (V)
102
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
mounted on a printed-circuit
board; minimum footprint;
vertical in still air
Min Typ Max Unit
-
-
0.59 K/W
-
50
-
K/W
1
Zth(j-mb)
(K/W)
10-1
δ = 0.5
0.2
0.1
0.05
0.02
10-2
003aab186
P
δ = tp
T
single shot
tp
t
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK763R4-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 â 21 April 2011
© NXP B.V. 2011. All rights reserved.
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