BUK7510-55AL_08 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7510-55AL
N-channel TrenchMOS standard level FET
Table 6. Characteristics …continued
Symbol Parameter
Conditions
Min
Typ
Max
Unit
t_d(off)
t_f
turn-off delay time
fall time
V_DS = 30 V; R_L = 1.2 Ω;
V_GS = 10 V; R_G(ext) = 10 Ω;
T_j = 25 °C
V_DS = 30 V; R_L = 1.2 Ω;
V_GS = 10 V; R_G(ext) = 10 Ω;
T_j = 25 °C
-
132
-
ns
-
95
-
ns
L_D
internal drain
from contact screw on package
-
3.5
-
nH
inductance
to center of die; T_j = 25 °C
from drain lead 6 mm from
package to center of die;
T_j = 25 °C
-
4.5
-
nH
L_S
internal source
from source lead to source bond
-
7.5
-
nH
inductance
pad; T_j = 25 °C
400
I_D
(A) ₂₀
18
300 ₁₆
14
12
200
100
0
0
2
T _j = 25 °C
003aaa729
V_GS (V) = 10
9.5
9
8.5
8
7.5
7
6.5
6
5.5
5
4.5
4
6
8
10
V_DS (V)
20
R_DSon
(mΩ)
15
7 8 9 10
003aaa731
10
V_GS (V) = 20
5
0
0
100
200
300
400
I_D (A)
T _j = 25 °C
Fig 6. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of drain current; typical values
BUK7510-55AL_2
Product data sheet
Rev. 02 — 3 January 2008
© NXP B.V. 2008. All rights reserved.
7 of 14