BUK7510-55AL_08 Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7510-55AL
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
R_th(j-a)
R_th(j-mb)
Thermal characteristics
Parameter
Conditions
thermal resistance
from junction to
ambient
vertical in still air
thermal resistance
from junction to
mounting base
see Figure 5
Min
Typ
Max
Unit
-
60
-
K/W
-
0.25
0.5
K/W
1
Z_th(j-mb)
(K/W) ^{δ = 0.5}
0.2
10^-1
0.1
0.05
0.02
10^-2
003aaa734
P
δ = ^tp
T
single shot
t_p
t
T
10^-3
10^-6
10^-5
10^-4
10^-3
10^-2
10^-1
t_p (s)
1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V_(BR)DSS
drain-source
breakdown voltage
I_D = 250 μA; V_GS = 0 V;
T_j = -55 °C
50
-
-
V
I_D = 250 μA; V_GS = 0 V;
T_j = 25 °C
55
-
-
V
V_GS(th)
gate-source threshold I_D = 1 mA; V_DS = V_GS; T_j = 25 °C;
2
3
4
V
voltage
see Figure 10 and 11
I_D = 1 mA; V_DS = V_GS;
-
-
T_j = -55 °C; see Figure 10 and 11
I_D = 1 mA; V_DS = V_GS;
1
-
T_j = 175 °C; see Figure 10 and
11
4.4
V
-
V
BUK7510-55AL_2
Product data sheet
Rev. 02 — 3 January 2008
© NXP B.V. 2008. All rights reserved.
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