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BUK7510-55AL_08 Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
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NXP Semiconductors
BUK7510-55AL
N-channel TrenchMOS standard level FET
Table 6. Characteristics …continued
Symbol Parameter
Conditions
Min
IDSS
IGSS
RDSon
drain leakage current VDS = 55 V; VGS = 0 V;
-
Tj = 175 °C
VDS = 55 V; VGS = 0 V; Tj = 25 °C
-
gate leakage current VDS = 0 V; VGS = +20 V;
-
Tj = 25 °C
VDS = 0 V; VGS = -20 V;
-
Tj = 25 °C
drain-source on-state VGS = 10 V; ID = 25 A;
-
resistance
Tj = 175 °C; see Figure 12 and
13
VGS = 10 V; ID = 25 A; Tj = 25 °C;
-
see Figure 12 and 13
Source-drain diode
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C;
-
see Figure 16
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/μs;
-
VGS = 0 V; VDS = 30 V; Tj = 25 °C
Qr
recovered charge
IS = 20 A; dIS/dt = -100 A/μs;
-
VGS = 0 V; VDS = 30 V; Tj = 25 °C
Dynamic characteristics
QG(tot)
total gate charge
ID = 25 A; VDS = 44 V;
-
VGS = 10 V; Tj = 25 °C;
see Figure 14
QGS
gate-source charge ID = 25 A; VDS = 44 V;
-
VGS = 10 V; Tj = 25 °C;
see Figure 14
QGD
gate-drain charge
ID = 25 A; VDS = 44 V;
-
VGS = 10 V; Tj = 25 °C;
see Figure 14
VGS(pl)
gate-source plateau ID = 25 A; VDS = 44 V; Tj = 25 °C;
-
voltage
see Figure 14
Ciss
input capacitance
VGS = 0 V; VDS = 25 V;
-
f = 1 MHz; Tj = 25 °C;
see Figure 15
Coss
output capacitance VGS = 0 V; VDS = 25 V;
-
f = 1 MHz; Tj = 25 °C;
see Figure 15
Crss
reverse transfer
VGS = 0 V; VDS = 25 V;
-
capacitance
f = 1 MHz; Tj = 25 °C;
see Figure 15
td(on)
turn-on delay time
VDS = 30 V; RL = 1.2 Ω;
-
VGS = 10 V; RG(ext) = 10 Ω;
Tj = 25 °C
tr
rise time
VDS = 30 V; RL = 1.2 Ω;
-
VGS = 10 V; RG(ext) = 10 Ω;
Tj = 25 °C
Typ
Max
Unit
-
500
μA
0.05
10
μA
2
100
nA
2
100
nA
-
20
mΩ
8.5
10
mΩ
0.85
1.2
V
73
-
ns
430
-
nC
124
-
nC
22
-
nC
50
-
nC
5
-
V
4710
6280
pF
980
1180
pF
560
770
pF
33
-
ns
117
-
ns
BUK7510-55AL_2
Product data sheet
Rev. 02 — 3 January 2008
© NXP B.V. 2008. All rights reserved.
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