BUK7510-55AL_08 Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7510-55AL
N-channel TrenchMOS standard level FET
Table 4. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Source-drain diode
I_S
source current
I_SM
peak source current
T_mb = 25 °C
T_mb = 25 °C
t_p ≤ 10 μs; pulsed; T_mb = 25 °C
[1] Current is limited by power dissipation chip rating.
[2] Refer to document 9397 750 12572 for further information.
[3] Continuous current is limited by package.
[4] Single-shot avalanche rating limited by maximum junction temperature of 175 °C.
[5] Repetitive avalanche rating limited by average junction temperature of 170 °C.
[6] Refer to AN10273 for further information.
Min
[1][2] _-
[3] _-
-
Max
Unit
122
A
75
A
490
A
150
I_D
(A)
100
(1)
50
003aaa726
120
P_der
(%)
80
40
03aa16
0
0
50
100
150
200
T_mb (°C)
V_GS • 10 V
(1) Capped at 75 A due to package.
Fig 1. Continuous drain current as a function of
mounting base temperature
0
0
50
100
P_der =
P_tot
P _{t o t (25°C )}
× 100 %
150
200
T_mb (°C)
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
BUK7510-55AL_2
Product data sheet
Rev. 02 — 3 January 2008
© NXP B.V. 2008. All rights reserved.
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