BUK7510-55AL_08 Datasheet, PDF (2/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning
Symbol
G
D
S
D
Description
gate
drain
source
mounting base;
connected to drain
BUK7510-55AL
N-channel TrenchMOS standard level FET
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78 (TO-220AB)
Table 3. Ordering information
Type number
Package
Name
Description
BUK7510-55AL
TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
Version
SOT78
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Avalanche ruggedness
T_j ≥ 25 °C; T_j ≤ 175 °C
R_GS = 20 kΩ
T_mb = 25 °C; V_GS = 10 V; see Figure 1 and 4
T_mb = 25 °C; V_GS = 10 V; see Figure 1 and 4
T_mb = 100 °C; V_GS = 10 V; see Figure 1
T_mb = 25 °C; t_p ≤ 10 μs; pulsed; see Figure 4
T_mb = 25 °C; see Figure 2
E_DS(AL)S non-repetitive
drain-source avalanche
energy
I_D = 75 A; V_sup ≤ 55 V; R_GS = 50 Ω;
V_GS = 10 V; T_j(init) = 25 °C; unclamped
inductive load
E_DS(AL)R repetitive drain-source
avalanche energy
see Figure 3
Min
-
-
-20
[1][2] _-
[3] _-
[3] _-
-
-
-55
-55
-
[4][5] _-
[6]
Max
Unit
55
V
55
V
20
V
122
A
75
A
75
A
490
A
300
W
175
°C
175
°C
1.1
J
-
J
BUK7510-55AL_2
Product data sheet
Rev. 02 — 3 January 2008
© NXP B.V. 2008. All rights reserved.
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