BUK218-50DY Datasheet, PDF (7/9 Pages) NXP Semiconductors – TOPFET dual high side switch

Philips Semiconductors
TOPFET dual high side switch
SWITCHING CHARACTERISTICS
T_mb = 25 ˚C, V_BG = 13 V, for resistive load R_L = 13 Ω per channel.
SYMBOL PARAMETER
CONDITIONS
t_{d on}
dV/dt_on
During turn-on
Delay time
Rate of rise of load voltage
from input going high
to 10% V_L
30% to 70% V_L
t _on
Total switching time
to 90% V_L
t_{d off}
dV/dt_off
t _off
During turn-off
Delay time
Rate of fall of load voltage
Total switching time
from input going low
to 90% V_L
70% to 30% V_L
to 10% V_L
CAPACITANCES
T_mb = 25 ˚C; f = 1 MHz; V_IG = 0 V
SYMBOL PARAMETER
C_sg
Status capacitance
per channel
C_ig
Input capacitance
C_bl
Output capacitance
CONDITIONS
V_SG = 5 V
V_BG = 13 V
V_BL = 13 V
Product specification
BUK218-50DY
MIN. TYP. MAX. UNIT
-
30
0.5 1
-
µs
2 V/µs
- 100 400 µs
-
20
-
µs
0.5 1
2 V/µs
-
40 200 µs
MIN. TYP. MAX. UNIT
-
11 15 pF
-
15 20 pF
- 265 375 pF
May 2001
7
Rev 1.400