BUK218-50DY Datasheet, PDF (2/9 Pages) NXP Semiconductors – TOPFET dual high side switch

Philips Semiconductors
TOPFET dual high side switch
Product specification
BUK218-50DY
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_BG
Continuous supply voltage
I_L
Continuous load current per channel T_mb ≤ 135˚C
P_D
Total power dissipation
T_mb ≤ 25˚C
T_stg
Storage temperature
T_j
Continuous junction temperature¹
Reverse battery voltages²
V_GB
Continuous reverse voltage
V_GB
Peak reverse voltage
Application information
R_I, R_S
External resistors³
to limit input, status currents
Input and status currents
I_I
Continuous input current
I_S
Continuous status current
I_I
Repetitive peak input current
δ ≤ 0.1, t_p = 300 µs
I_S
Repetitive peak status current
δ ≤ 0.1, t_p = 300 µs
Inductive load clamping
V_BG = 13 V, I_L = 8 A
E_BL
Non-repetitive clamping energy (one T_j = 150˚C prior to turn-off
channel)
ESD LIMITING VALUE
SYMBOL PARAMETER
V_C
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
0
-
-
-55
-40
-
-
3.2
-5
-5
-50
-50
-
MIN.
-
MAX.
50
8
83.3
175
150
16
32
-
5
5
50
50
150
MAX.
2
UNIT
V
A
W
˚C
˚C
V
V
kΩ
mA
mA
mA
mA
mJ
UNIT
kV
1 For normal continuous operation. A higher T_j is allowed as an overload condition but at the threshold T_j(TO) the over temperature trip operates
to protect the switch.
2 Reverse battery voltage is allowed only with external resistors to ensure that the input and status currents do not exceed the limiting values.
The internal ground resistor limits the reverse battery ground current. The connected loads must limit the reverse load currents. Power
is dissipated and the T_j rating must be observed.
3 To limit currents during reverse battery and transient overvoltages (positive or negative).
May 2001
2
Rev 1.400