BUK218-50DY Datasheet, PDF (4/9 Pages) NXP Semiconductors – TOPFET dual high side switch

Philips Semiconductors
TOPFET dual high side switch
Product specification
BUK218-50DY
INPUT CHARACTERISTICS
5.5 V ≤ V_BG ≤ 35 V. Limits are at -40˚C ≤ T_mb ≤ 150˚C and typicals at T_mb = 25˚C unless otherwise stated.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX.
UNIT
I_I
Input current
V_IG = 5 V
20 60 160 µA
V_IG
Input clamping voltage
I_I = 200 µA
5.5
7
8.5
V
V_IG(ON)
Input turn-on threshold voltage
-
2.1
3
V
V_IG(OFF)
Input turn-off threshold voltage
1.2 1.8
-
V
∆V_IG
Input turn-on hysteresis
0.15 0.3 0.5 V
I_I(ON)
Input turn-on current
V_IG = 3 V
-
- 100 µA
I_I(OFF)
Input turn-off current
V_IG = 1.2 V
12
-
-
µA
OPEN CIRCUIT DETECTION CHARACTERISTICS
An open circuit load on either channel can be detected in the off-state. Refer to TRUTH TABLE.
This feature requires external load pull-up to a positive supply voltage via a suitable resistor.
Limits are at -40˚C ≤ T_mb ≤ 150˚C and typical is at T_mb = 25˚C.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP.
MAX.
UNIT
Open circuit detection
V_LG(OC)
I_B(OC)
Load ground threshold voltage V_BG ≥ 9 V
Supply quiescent current per
OC channel
V_BG = V_LG = 16 V
open circuit detected,
other channel off
1.5 2.5 3.5 V
-
0.8 1.5 mA
-I_L(OC)
t_d(OC)
Load ground current per
channel
Status delay time
Application information
V_LG = 16 V
V_LG = 3.5 V
input low to status low
- 200 300 µA
-
22 40 µA
-
65 100 µs
R_ext
External load pull-up resistance V_ext = 5 V
per channel
-
10
-
kΩ
May 2001
4
Rev 1.400