BUK218-50DY Datasheet, PDF (5/9 Pages) NXP Semiconductors – TOPFET dual high side switch

Philips Semiconductors
TOPFET dual high side switch
Product specification
BUK218-50DY
UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS
Limits are at -40˚C ≤ T_mb ≤ 150˚C and typicals at T_mb = 25˚C. Refer to TRUTH TABLE.
SYMBOL PARAMETER
CONDITIONS
MIN.
Undervoltage
TYP.
MAX. UNIT
V_BG(UV)
∆V_BG(UV)
Low supply threshold voltage¹
Hysteresis
Overvoltage
2
4.2 5.3
V
0.1 0.5 1
V
V_BG(OV)
∆V_BG(OV)
I_BG(OV)
High supply threshold voltage²
Hysteresis
Operating current per channel V_BG = 45 V
35 40 45
V
0.4 1
2
V
-
1
2 mA
OVERLOAD PROTECTION CHARACTERISTICS
Independent protection per channel. Refer to TRUTH TABLE.
5.5 V ≤ V_BG ≤ 35 V, limits are at -40˚C ≤ T_mb ≤ 150˚C and typicals at T_mb = 25˚C unless otherwise stated.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX.
UNIT
I_L(lim)
P_D(TO)
T_DSC
Overload protection
Load current limiting
Short circuit load protection
Overload power threshold
Characteristic time
V_BL = V_BG; t_p = 300 µs
V_BG ≥ 8 V
V_BG = 5.5 V
T_mb ≤ 125˚C prior to overload³
for latched protection⁴
which determines trip time⁵
Overtemperature protection
18 30 42
A
15 27 42
A
100 150 200 W
- 200 500 µs
T_j(TO)
∆T_j(TO)
Threshold junction temperature
Hysteresis⁶
150 170 190 ˚C
3
10 20 ˚C
1 Undervoltage sensors causes each channel to switch off and reset.
2 Overvoltage sensors causes each output channel to switch off to protect its load.
3 Above this temperature measurement of these parameters is prevented because OT protection may occur prior to SC protection.
4 SC protection for P_D > P_D(TO) is latched. Normal operation may only be resumed after the input is toggled low then high again.
Normal operation is maintained as long as P_D < P_D(TO) and T_j < T_j(TO).
5 Trip time t_{d sc} varies with overload dissipation P_D according to the exponential model formula t_{d sc} ≈ T_DSC / LN[ P_D / P_D(TO) ].
6 After cooling below the reset temperature the channel will resume normal operation.
May 2001
5
Rev 1.400