BU505F Datasheet, PDF (7/12 Pages) NXP Semiconductors – Silicon diffused power transistors

Philips Semiconductors
Silicon diffused power transistors
Product specification
BU505F; BU505DF
handbook, halfpage
+ 50 V
100 to 200 Ω
L
horizontal
oscilloscope
vertical
6V
30 to 60 Hz
300 Ω
1Ω
MGE252
handbookI,_Chalfpage
(mA)
250
200
100
0
MGE239
min ^{VCE (V)}
VCEOsust
Fig.6 Test circuit for collector-emitter
sustaining voltage.
Fig.7 Oscilloscope display for collector-emitter
sustaining voltage.
800
handbook, halfpage
VCEsat
(mV)
600
400
MGB889
handbook¹, h^.5alfpage
VBEsat
(V)
1
MGB882
200
0
10^−1
1
IC (A)
10
I_C/I_B = 2; T_j = 25 °C.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
0.5
10^−1
1
IC (A)
10
I_C/I_B = 2; T_j = 25 °C.
Fig.9 Base-emitter saturation voltage as a
function of collector current; typical values.
1997 Aug 13
7