BU505F Datasheet, PDF (5/12 Pages) NXP Semiconductors – Silicon diffused power transistors

Philips Semiconductors
Silicon diffused power transistors
Product specification
BU505F; BU505DF
handbook, full pagewidth
10²
IC
(A)
10
ICM _max
IC _max
1
MGB931
II
10^−1
I
10^−2
10^−3
10^−4
1
10
10²
10³ _{VCE (V)} 10⁴
Mounted without heatsink compound and 30 ±5 N force on centre of package.
T_h = 25 °C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
Fig.4 Forward bias SOAR.
1997 Aug 13
5