BU505F Datasheet, PDF (2/12 Pages) NXP Semiconductors – Silicon diffused power transistors

Philips Semiconductors
Silicon diffused power transistors
Product specification
BU505F; BU505DF
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT186 package with
electrically isolated mounting base.
The BU505DF has an integrated
efficiency diode.
APPLICATIONS
• Horizontal deflection circuits of
colour television receivers.
PINNING
PIN
DESCRIPTION
1 base
2 collector
3 emitter
mb mounting base; electrically
isolated from all pins
123
Front view
MBC668
2
1
MBB008
3
a. BU505F.
2
1
MBB077
3
b. BU505DF.
Fig.1 Simplified outline (SOT186) and symbols.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CESM
V_CEO
V_CEsat
collector-emitter peak voltage
collector-emitter voltage
collector-emitter saturation
voltage
V_F
diode forward voltage
(BU505DF)
I_Csat
collector saturation current
I_C
collector current (DC)
I_CM
collector current (peak value)
P_tot
total power dissipation
t_f
fall time
CONDITIONS
V_BE = 0
open base
I_C = 2 A; I_B = 900 mA; see Fig.8
I_F = 2 A
see Figs 4 and 5
see Figs 4 and 5
T_h ≤ 25 °C; see Fig.2
inductive load; see Fig.10
TYP.
−
−
−
MAX.
1 500
700
1
UNIT
V
V
V
−
1.8
V
−
2
A
−
2.5
A
−
4
A
−
20
W
0.7
−
µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-h}
R_{th j-a}
thermal resistance from junction to external heatsink note 1
note 2
thermal resistance from junction to ambient
Notes
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
2. Mounted with heatsink compound and 30 ±5 N force on centre of package.
VALUE
6.35
3.85
55
UNIT
K/W
K/W
K/W
1997 Aug 13
2