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BU505F Datasheet, PDF (4/12 Pages) NXP Semiconductors – Silicon diffused power transistors
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BU505F; BU505DF
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VCEOsust collector-emitter sustaining voltage IC = 0.1 A; IB = 0; L = 25 mH;
see Figs 6 and 7
VCEsat
collector-emitter saturation voltage IC = 2 A; IB = 900 mA;
see Fig.8
VBEsat
base-emitter saturation voltage
IC = 2 A; IB = 900 mA;
see Fig.9
VF
diode forward voltage (BU505DF) IF = 2 A
ICES
collector-emitter cut-off current
VCE = VCESmax; VBE = 0;
note 1
IEBO
emitter-base cut-off current
hFE
DC current gain
fT
transition frequency
VCE = VCESmax; VBE = 0;
Tj = 125 °C; note 1
VEB = 5 V; IC = 0
see Fig.3
VCE = 5 V; IC = 2 A
VCE = 5 V; IC = 100 mA
VCE = 5 V; IC = 100 mA;
f = 1 MHz
Cc
collector capacitance
VCB = 10 V; IE = ie = 0;
f = 1 MHz
MIN.
700
−
−
−
−
−
−
2.22
6
−
−
Switching times in horizontal deflection circuit (see Fig.4)
ts
storage time
tf
fall time
ICM = 2 A; IB(end) = 900 mA;
Vdr = −4 V
LB = 10 µH
−
LB = 15 µH
−
LB = 25 µH
−
ICM = 2 A; IB(end) = 900 mA;
Vdr = −4 V
LB = 10 µH
−
LB = 15 µH
−
LB = 25 µH
−
Note
1. Measured with a half-sinewave voltage (curve tracer).
TYP.
−
−
−
−
−
−
−
−
13
7
65
6.5
7.5
9.5
0.9
0.9
0.85
MAX. UNIT
−
V
1
V
1.3
V
1.8
V
0.15 mA
1
mA
1
mA
−
30
−
MHz
−
pF
−
µs
−
µs
−
µs
−
µs
−
µs
−
µs
1997 Aug 13
4
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