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BTA208S-600D Datasheet, PDF (7/14 Pages) NXP Semiconductors – 3Q Hi-Com Triac
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NXP Semiconductors
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
IL
latching current
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 9
VT
on-state voltage
IT = 10 A; Tj = 25 °C; Fig. 10
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
ID
off-state current
VD = 600 V; Tj = 125 °C
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 402 V; Tj = 110 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 125 °C; IT(RMS) = 8 A;
dVcom/dt = 0.1 V/µs; gate open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 8 A;
dVcom/dt = 10 V/µs; gate open circuit;
Fig. 12
BTA208S-600D
3Q Hi-Com Triac
Min Typ Max Unit
-
-
5
mA
-
-
5
mA
-
-
5
mA
-
-
15
mA
-
-
25
mA
-
-
25
mA
-
-
15
mA
-
-
1.65 V
-
0.7 1
V
0.25 0.4 -
V
-
-
0.5 mA
20
-
-
V/µs
6
-
-
A/ms
2
-
-
A/ms
BTA208S-600D
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 August 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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