BTA208S-600D Datasheet, PDF (3/14 Pages) NXP Semiconductors – 3Q Hi-Com Triac

NXP Semiconductors
BTA208S-600D
3Q Hi-Com Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DRM
repetitive peak off-state voltage
I_T(RMS)
RMS on-state current
full sine wave; T_mb ≤ 102 °C; Fig. 1;
Fig. 2; Fig. 3
I_TSM
non-repetitive peak on-state full sine wave; T_j(init) = 25 °C;
current
t_p = 20 ms; Fig. 4; Fig. 5
full sine wave; T_j(init) = 25 °C;
t_p = 16.7 ms
I²t
I²t for fusing
t_p = 10 ms; SIN
dI_T/dt
rate of rise of on-state current I_T = 12 A; I_G = 0.2 A; dI_G/dt = 0.2 A/µs
I_GM
peak gate current
P_GM
peak gate power
P_G(AV)
average gate power
over any 20 ms period
T_stg
storage temperature
T_j
junction temperature
10
I_T(RMS)
(A)
8
003aaf581
102 °C
25
I_T(RMS)
(A)
20
Min Max Unit
-
600 V
-
8
A
-
65
A
-
72
A
-
21
A²s
-
100 A/µs
-
2
A
-
5
W
-
0.5 W
-40 150 °C
-
125 °C
003aaf617
6
15
4
10
2
5
0
- 50
0
50
100
150
T_mb (°C)
010_{- 2}
10^{- 1}
1
10
surge duration (s)
Fig. 1.
RMS on-state current as a function of mounting
base temperature; maximum values
Fig. 2.
f = 50 Hz; T_mb = 102 °C
RMS on-state current as a function of surge
duration; maximum values
BTA208S-600D
Product data sheet
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11 August 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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