BFG591 Datasheet, PDF (7/12 Pages) NXP Semiconductors – NPN 7 GHz wideband transistor

Philips Semiconductors
NPN 7 GHz wideband transistor
Product specification
BFG591
handbook^−,²h⁰alfpage
dim
(dB)
−30
−40
−50
−60
−70
0
40
MGC797
80
120
IC (mA)
V_CE = 12 V; V_o = 700 mV; f_(p+q-r) = 793.25 MHz.
Fig.9 Intermodulation distortion as a function
of collector current; typical values.
handbook^−,²h⁰alfpage
d2
(dB)
−30
−40
−50
−60
−70
0
40
MGC798
80
120
IC (mA)
V_CE = 12 V; V_o = 316 mV; f_(p+q) = 810 MHz.
Fig.10 Second order Intermodulation distortion as
a function of collector current; typical values.
1995 Sep 04
7