BFG591 Datasheet, PDF (2/12 Pages) NXP Semiconductors – NPN 7 GHz wideband transistor

Philips Semiconductors
NPN 7 GHz wideband transistor
Product specification
BFG591
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
APPLICATIONS
Intended for applications in the GHz
range such as MATV or CATV
amplifiers and RF communications
subscriber equipment.
DESCRIPTION
NPN silicon planar epitaxial transistor ^fpage
in a plastic, 4-pin SOT223 package.
PINNING
PIN
DESCRIPTION
1 emitter
2 base
3 emitter
4 collector
4
1
2
3
Top view
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
I_C
P_tot
h_FE
C_re
f_T
G_UM
s₂₁ ²
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
insertion power gain
open emitter
open base
up to T_s = 80 °C; note 1
I_C = 70 mA; V_CE = 8 V
I_C = I_c = 0; V_CE = 12 V; f = 1 MHz
I_C = 70 mA; V_CE = 12 V; f = 1 GHz
I_C = 70 mA; V_CE = 12 V;
f = 900 MHz; T_amb = 25 °C
I_C = 70 mA; V_CE = 12 V;
f = 900 MHz; T_amb = 25 °C
Note
1. T_s is the temperature at the soldering point of the collector pin.
MIN.
−
−
−
−
60
−
−
−
TYP.
−
−
−
−
90
0.7
7
13
MAX.
20
15
200
2
250
−
−
−
UNIT
V
V
mA
W
pF
GHz
dB
−
12
−
dB
1995 Sep 04
2