BFG591 Datasheet, PDF(4/12 Page) NXP Semiconductors

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BFG591 Datasheet, PDF (4/12 Pages) NXP Semiconductors – NPN 7 GHz wideband transistor

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Philips Semiconductors

NPN 7 GHz wideband transistor

Product speciï¬cation

BFG591

CHARACTERISTICS

Tj = 25 Â°C (unless otherwise speciï¬ed).

SYMBOL

PARAMETER

V(BR)CBO

V(BR)CES

V(BR)EBO

ICBO

hFE

Cre

collector-base breakdown voltage

collector-emitter breakdown voltage

emitter-base breakdown voltage

collector-base leakage current

DC current gain

feedback capacitance

transition frequency

GUM

maximum unilateral power gain;

note 1

s21 2

insertion power gain

output voltage

CONDITIONS

IC = 0.1 mA; IE = 0

IC = 10 mA; IB = 0

IE = 0.1 mA; IC = 0

IE = 0; VCB = 10 V

IC = 70 mA; VCE = 8 V

IB = Ib = 0; VCE = 12 V;

f = 1 MHz

IC = 70 mA; VCE = 12 V;

f = 1 GHz

IC = 70 mA; VCE = 12 V;

f = 900 MHz; Tamb = 25 Â°C

IC = 70 mA; VCE = 12 V;

f = 2 GHz; Tamb = 25 Â°C

IC = 70 mA; VCE = 12 V;

f = 1 GHz; Tamb = 25 Â°C

note 2

MIN.

TYP.

0.7

MAX. UNIT

100 nA

250

GHz

7.5

700 â

Notes

1. GUM is the maximum unilateral power gain, assuming s12 is zero.

2. dim = 60 dB (DIN45004B);

GUM

log -(---1-----â------s---1--1-----2s--)-2---1-(--1-2----â------s---2---2----2---)--

dB.

Vp = Vo; Vq = Vo â6 dB; Vr = Vo â6 dB;

fp = 795.25 MHz; fq = 803.25 MHz; fr = 803.25 MHz; measured at f(p+q-r) = 793.25 MHz.

1995 Sep 04

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