BFG591 Datasheet, PDF (5/12 Pages) NXP Semiconductors – NPN 7 GHz wideband transistor

Philips Semiconductors
NPN 7 GHz wideband transistor
Product specification
BFG591
3.0
Ptot
(W)
2.5
2.0
1.5
1.0
0.5
0
0
MGC791
50
100
150 _{Ts (oC)} 200
Fig.2 Power derating curve.
250
handbook, halfpage
h _FE
200
150
100
50
0
10 ²
10 ¹
1
MRA749
10
10 ²
IC (mA)
V_CE = 12 V.
Fig.3 DC current gain as a function of collector
current, typical values.
handbook¹, ^.h²alfpage
C _re
(pF)
0.8
MGC792
0.4
0
0
4
8
12
16
VCB (V)
handbook, h⁸alfpage
fT
(GHz)
6
4
2
0
1
MGC793
10
10 ²
IC (mA)
I_C = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage, typical values.
1995 Sep 04
f = 1 GHz; V_CE = 12 V.
Fig.5 Transition frequency as a function of
collector current, typical values.
5